Piezoelectric Strain FET (PeFET)-Based Nonvolatile Memories

We propose nonvolatile memory (NVM) designs based on piezoelectric strain FET (PeFET) utilizing piezoelectric/ferroelectric material (PE/FE such as PZT) coupled with 2-D transition metal dichalcogenide (2-D-TMD MoS $_{{2}}{)}$ -based transistor. The proposed NVMs store bit information in the form of polarization ( notation="LaTeX">${P}$ ) FE/PE, use electric-field driven -switching for write, and employ piezoelectricity-induced dynamic bandgap modulation 2-D-TMD channel sensing. analyze PeFET COMSOL-based 3-D modeling, showing that circuit-driven optimization geometry is essential to achieve effective transduction adequate NVM read. distinguishability up notation="LaTeX">$11\times $ binary states PeFETs. various flavors NVMs, namely: 1) high-density (HD) featuring a compact access-transistor-less bit-cell; 2) 1T-1PeFET segmented architecture, targeted optimized write energy latency; 3) cross-coupled (CC) offering tradeoff between area latency. offer notation="LaTeX">$7\times smaller cell area, 66% lower energy, 87% read 44% faster compared 2-D-FET static random access (SRAM). This comes at cost high latency which can be minimized by virtue PE geometry.